JSSC 2007第10期Other0.5μm E-mode GaAs PHEMT

Linearized Darlington Cascode Ampliﬁer Employing GaAs PHEMT and GaN HEMT Technologies

本文提出了一种新型达林顿级联放大器拓扑结构，采用GaAs PHEMT和GaN HEMT技术，显著提升了增益和IP3带宽性能。

12.5 dB增益，16 GHz 3 dB带宽，29 dBm IP3，1-4 GHz多倍频带输出功率大于1 W

达林顿级联放大器GaAs PHEMTGaN HEMT线性化宽带

▸创新点1：新型达林顿级联（DCAS）反馈放大器拓扑，通过结合GaAs PHEMT和GaN HEMT技术，显著提升了增益和IP3带宽性能，实现了12.5 dB增益和16 GHz 3 dB带宽，较传统达林顿放大器设计带宽提升60%。

▸创新点2：主动自偏置技术，优化了放大器的工作点，提高了电路的稳定性和偏置鲁棒性，同时未显著增加噪声系数，确保了高性能与低噪声的平衡。

▸创新点3：线性化达林顿级联电路，通过引入线性化技术，显著改善了IP3带宽性能，实现了29 dBm的IP3和13 GHz带宽，较传统方法IP3带宽提升80%。

▸创新点4：该DCAS拓扑成功应用于高电压GaN HEMT技术，在1-4 GHz多倍频带内实现了超过1 W的输出功率，展示了其在宽带高功率应用中的潜力。

Abstract

This paper reports on the results of a new Darlington Cascode (DCAS) feedback ampliﬁer topology implemented with 0.5 m E-mode GaAs PHEMT technology. The Darlington cascode employs active self-bias and a linearizing Darlington cascode circuit for achieving enhanced gain and IP3-bandwidth performance. The Darlington cascode achieves 12.5 dB gain with a 16 GHz 3 dB bandwidth (BW)—a 60% BW improvement over an equivalent conventional Darlington ampliﬁer design. The DCAS obtains an IP3 of 29 dBm with a 13 GHz BW—an 80% improvement in IP3-BW over the conventional Darlington approach. These improvements have been obtained without signiﬁcantly compromising noise ﬁgure, stability, or bias robust- ness. The DCAS ampliﬁer design approach was also successfully applied to a high-voltage GaN HEMT technology and resulted in greater than 1 W output power over a multi-octave 1–4 GHz band. The DCAS topology offers an approach for compacting high microwave performance into a small area without the use of distributed or reactive matching techniques.