← 返回 JSSC 论文列表JSSC 2007第11期RF & Wireless90nmLNA
Sub-0.2 dB Noise Figure Wideband Room-Temperature CMOS LNA With Non-50 /10Signal-Source Impedance
本文介绍了一种用于射电望远镜接收机的宽带低噪声放大器(LNA),在90nm CMOS工艺下实现了低于0.2 dB的噪声系数。
90nm CMOS, 1V, 43mA, 800-1400MHz, <0.2dB噪声系数, >17dB增益
低噪声放大器宽带CMOS射电望远镜噪声优化
▸创新点1:噪声系数优化技术(方法创新) - 通过优化信号源电阻匹配,实现了低于0.2 dB的超低噪声系数,这是目前已知室温下宽带CMOS LNA中的最佳性能。
▸创新点2:宽带性能设计(电路创新) - 在800 MHz至1400 MHz的宽频带范围内保持高增益(>17 dB)和良好的回波损耗(>11 dB),满足了射电望远镜接收机的宽频带需求。
▸创新点3:集成与外部电感结合设计(系统创新) - 创新性地将负载扼流电感和源电感集成,同时保留栅极、偏置和级间扼流电感为外部元件,优化了性能与面积的平衡。
▸创新点4:高线性度设计(电路创新) - 实现了输出1 dB压缩点(2 dBm)和高阶互调指标(OIP3=12 dBm,OIP2=22 dBm),在低噪声前提下保障了大信号处理能力。
Abstract
This paper presents a wideband low-noise amplifier (LNA) designed to be used as the first stage of the receiver in the Square Kilometer Array radio telescope. The LNA design proce- dure and its layout features are discussed. The noise figure opti- mization procedure determines the signal-source resistance that results in reduced noise figure. When used in the radio telescope, the required signal-source resistance will be presented by the tele- scope custom-made antenna elements. The LNA, designed in 90 nm bulk CMOS, achieves sub-0.2 dB noise figure from 800 MHz to 1400 MHz, return loss of more than 11 dB, gain /40 /50/49/41of more than 17 dB driven into a 50/10load, output 1 dB compression point of 2 dBm, output IP3 of 12 dBm, and output IP2 of 22 dBm while consuming 43 mA from a 1 V supply. In the LNA implementation presented in this paper the load choke inductor and the source in- ductor are integrated whereas the gate-, bias-, and the choke-in- ductor between two transistors of the cascode are external. The noise figure of the presented LNA is to our knowledge the lowest noise figure achieved by a power matched wideband CMOS LNA at room temperature.