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A 90 nm 18 V 512 Mb Diode-Switch PRAM With 266 MBs Read Throughput Kwang-Jin Lee
90纳米工艺下开发的512Mb二极管开关PRAM，实现266MB/s读取吞吐量。
90nm CMOS, 18V, 266MB/s读取吞吐量, 4.64MB/s写入吞吐量
PRAM二极管开关90纳米工艺读取吞吐量电荷泵系统
▸创新点1：垂直二极管开关技术（方法创新）。采用SEG技术实现垂直二极管开关，显著缩小了单元尺寸，提升了集成密度，同时降低了功耗。
▸创新点2：无干扰核心操作（系统创新）。通过优化核心配置和电路设计，实现了无干扰的核心操作，提高了存储器的可靠性和稳定性。
▸创新点3：优化的电荷泵系统（电路创新）。设计了高效的电荷泵系统，支持1.8 V供电，显著提升了写入速度，x16加速写入模式下达到4.64 MB/s。
▸创新点4：高读取吞吐量（性能创新）。通过优化读写电路技术，实现了266 MB/s的读取吞吐量，大幅提升了数据访问效率。
Abstract
A 512 Mb diode-switch PRAM has been developed
in a 90 nm CMOS technology. The vertical diode-switch using
the SEG technology has achieved minimum cell size and dis-
turbance-free core operation. A core configuration, read/write
circuit techniques, and a charge-pump system for the diode-switch
PRAM are proposed. The 512 Mb PRAM has achieved read
throughput of 266 MB/s through the proposed schemes. The
write throughput was 0.54 MB/s in internal x2 write mode, and
increased to 4.64 MB/s with x16 acc