← 返回 JSSC 论文列表JSSC 2008第3期RF & Wireless0.35μm CMOSLNA
A Noise Reduction and Linearity Improvement Technique for a Differential Cascode LNA
通过电感与电容交叉耦合技术降低差分共源共栅LNA噪声并提升线性度
1.92dB噪声系数, 8.4dB功率增益, >13dB S11, >30dB隔离度, 2.55dBm IIP3, 9mA@1.8V
低噪声放大器共源共栅噪声抑制线性度优化差分结构
▸在共栅晶体管栅极添加电感与电容交叉耦合结合
▸相比传统方法使用更小的噪声抑制电感
▸同时降低噪声、提高线性度和增益
Abstract
A typical common source cascode low-noise amplifier (CS-LNA) can be treated as a CS-CG two stage amplifier. In the published literature, an inductor is added at the drain of the main transistor to reduce the noise contribution of the cascode transis- tors. In this work, an inductor connected at the gate of the cas- code transistor and capacitive cross-coupling are strategically com- bined to reduce the noise and the nonlinearity influences of the cas- code transistors in a differential cascode CS-LNA. It uses a smaller noise reduction inductor compared with the conventional inductor based technique. It can reduce the noise, improve the linearity and also increase the voltage gain of the LNA. The proposed technique is theoretically formulated. Furthermore, as a proof of concept, a 2.2 GHz inductively degenerated CS-LNA was fabricated using TSMC 0.35 m CMOS technology. The resulting LNA achieves 1.92 dB noise figure, 8.4 dB power gain, better than 13 dB S11, more than 30 dB isolation (S12), and 2.55 dBm IIP3, with the core fully differential LNA consuming 9 mA from a 1.8 V power supply.