← 返回 JSSC 论文列表JSSC 2008第4期Data Converters0.18-μm 2P3MCMOS Image Sensor
A 200- 22Ve CMOS Image Sensor With 100-ke Full Well Capacity Satoru Adachi Membe
开发了一种高灵敏度CMOS图像传感器，通过新型像素设计实现高满阱容量。
200- V/e转换增益, 100-ke满阱容量, 2.2-e rms噪声底限
CMOS图像传感器高灵敏度满阱容量浮动扩散电容自对准偏移结构
▸采用小浮动扩散电容连接横向溢出集成电容
▸自对准偏移结构抑制转换增益变化
▸双信号输出确保高灵敏度和高满阱容量
Abstract
A high-sensitivity CMOS image sensor keeping a
high full-well capacity has been developed by introducing a new
pixel having a small floating diffusion (FD) capacitance connected
to a lateral overflow integration capacitor (LOFIC) through a
MOS switch. The conceptual advantage of the small FD approach
over conventional column amplifier approaches is compared and
demonstrated. To ensure both the high sensitivity and the high
full-well capacity, the low-light and the bright-light signals (S1
and S2) a