Abstract
kura, Marefusa Kurumada, Toshio Terano, Y oshinobu Y amagami, Naoki Kotani, Katsuji Satomi,
Koji Nii, Member , IEEE, Makoto Y abuuchi, Y asumasa Tsukamoto, Shigeki Ohbayashi, Toshiyuki Oashi,
Hiroshi Makino, Hirofumi Shinohara, and Hironori Akamatsu , Member , IEEE
Abstract—We propose a new 2-port SRAM with a single read
bit line (SRBL) eight transistors (8T) memory cell for a 45 nm
system-on-a-chip (SoC). Access time tends to be slower as a fab-
rication is scaled down because of threshold volt