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JSSC 2008第4期Memory45nmSRAM

A 45 nm 2-port 8T-SRAM Using Hierarchical Replica Bitline Technique With Immunit

提出一种45nm 2端口8T-SRAM,采用分层复制位线技术,解决同时读写问题。
45nm LSTP CMOS, 64kb, 7倍更快访问速度
分层位线误读同时读写访问单一位线2端口SRAM
单读位线8T存储单元设计
分读位线共享本地放大器方案(DBSA)
读结束检测复制电路(RER)和本地读位线虚拟电容(LDC)
Abstract
kura, Marefusa Kurumada, Toshio Terano, Y oshinobu Y amagami, Naoki Kotani, Katsuji Satomi, Koji Nii, Member , IEEE, Makoto Y abuuchi, Y asumasa Tsukamoto, Shigeki Ohbayashi, Toshiyuki Oashi, Hiroshi Makino, Hirofumi Shinohara, and Hironori Akamatsu , Member , IEEE Abstract—We propose a new 2-port SRAM with a single read bit line (SRBL) eight transistors (8T) memory cell for a 45 nm system-on-a-chip (SoC). Access time tends to be slower as a fab- rication is scaled down because of threshold volt