← 返回 JSSC 论文列表JSSC 2008第5期RF & WirelessSiGe HBT
165-GHz Transceiver in SiGe Technology Ekaterina Laskin Student Member IEEE Pas
SiGe技术实现的165GHz收发器，集成度高，性能优异
3dB峰值差分下变频增益，3.5dBm输出功率，0.9W功耗
SiGe技术165GHz收发器D-band毫米波集成电路
▸80GHz正交Colpitts振荡器
▸双平衡Gilbert-cell混频器
▸宽带70GHz至180GHz垂直堆叠变压器
Abstract
Two D-band transceivers, with and without ampli-
fiers and static frequency divider , transmitting simultaneously in
the 80-GHz and 160-GHz bands, are fabricated in SiGe HBT tech-
nology. The transceivers feature an 80-GHz quadrature Colpitts
oscillator with differential outputs at 160 GHz, a double-balanced
Gilbert-cell mixer, 170-GHz amplifiers and broadband 70-GHz to
180-GHz vertically stacked transformers for single-ended to dif-
ferential conversion. For the transceiver with amplifiers and sta