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JSSC 2008第5期Other0.18微米

Power-Combining Transformer Techniques for Fully-Integrated CMOS Power Amplifiers Kyu Hwan An , Student Member , IEEE , Ockgoo Lee , Student Member , IEEE , Hyungwook Kim, Student Member , IEEE, Dong

介绍两种并联功率合成变压器在完全集成CMOS功率放大器中的应用及性能比较。
31.2 dBm输出功率（41% PAE）和32 dBm输出功率（30% PAE）
CMOS功率放大器功率合成变压器完全集成功率效率无线通信
▸分析并比较了串联和并联功率合成变压器的寄生电阻和匝数比限制
▸设计了两种并联功率合成变压器（两初级1:2和三初级1:2）
▸在0.18微米CMOS工艺中实现了高输出功率和高效率的功率放大器
Abstract
, Student Member , IEEE , Hyungwook Kim, Student Member , IEEE, Dong Ho Lee , Member , IEEE, Jeonghu Han , Member , IEEE, Ki Seok Y ang, Member , IEEE, Y ounsuk Kim, Member , IEEE, Jae Joon Chang , Member , IEEE, Wangmyong Woo, Member , IEEE, Chang-Ho Lee , Senior Member , IEEE, Haksun Kim , Member , IEEE, and Joy Laskar, Fellow, IEEE Abstract—Fully integrated CMOS power amplifiers (PAs) with parallel power-combining transformer are presented. For the high power CMOS PA design, two types of trans