← 返回 JSSC 论文列表JSSC 2008第7期Digital Circuits90nmNeural Network Accelerator
A Wideband Millimeter-Wave Power Amplifier With 20 dB Linear Power Gain and 8 dBm
一款90纳米CMOS工艺的毫米波功率放大器，具有20 dB线性增益和8 dBm输出功率。
52.4 GHz时19.7 dB增益，60 GHz时10.3 dB增益，最大饱和输出功率3.1 dBm，峰值PAE 4.2%
毫米波功率放大器CMOS共源共栅片上匹配网络共面波导
▸采用3级共源共栅结构
▸使用宽间隙共面波导和MIM电容实现片上匹配网络
▸在52.4 GHz实现19.7 dB线性增益
Abstract
A millimeter-wave power amplifier fabricated in
90 nm bulk CMOS technology consists of 3 identical cascode
stages and on-chip matching networks (inter-stage, input, and
output) implemented with wide-gap coplanar waveguides and
M6-M5 (MIM) capacitors. The amplifier realizes a linear power
gain of 19.7 dB at 52.4 GHz and 10.3 dB at 60 GHz. Maximum
saturated output power and output-referred
1 dB compression
point are /438.2 dBm and 3.1 dBm, respectively. Peak PAE is 4.2%.
The 1.18
0.96 mm /50die con