Abstract
In this investigation we examine different pixel struc-
tures and readout principles to be used in imagers fabricated
in standard CMOS processes, for example, the 0.5
m and 0.35
m processes available at the Fraunhofer IMS. The targeted
applications are high-speed near-infra-red (NIR) 3-D imaging
based on time-of-flight (TOF) measurements. We discuss various
issues ranging from charge-coupling possibilities to noise, spectral
responsivity and fill-factor , and present an extensive study of pixel
co