← 返回 JSSC 论文列表JSSC 2008第8期RF & Wireless0.13μm
A 305 dBm 48 PAE CMOS Class-E PA With Integrated Balun for RF Applications
研究高效能Class-E功率放大器与集成巴伦的CMOS设计
31 dBm输出功率，58% PAE，67%漏极效率（1.7 GHz）；30.5 dBm输出功率，48% PAE，55%漏极效率（1.6 GHz）
Class-E功率放大器集成巴伦CMOS高效率射频应用
▸采用全差分共源共栅拓扑提高效率和可靠性
▸集成最小数量电感的窄带集总元件巴伦以减少功率损耗
▸在0.13μm CMOS工艺中实现高效率和输出功率
Abstract
Integration of the power amplifier together with
signal processing in a transmitter is still missing in demanding RF
commercial products. Issues preventing PA integration include
LO pulling phenomena, thermal dissipation, and power efficiency.
In this work we investigate high efficiency watt range Class-E
PAs and integrated baluns. In particular, insights in the design of
a fully differential cascode topology for high efficiency and reli-
able operation are provided and a narrowband lumped element
b