JSSC 2008第9期Other0.13μm

An On-Chip Test Structure and Digital Measurement Method for Statistical Charact

提出一种基于数字电压测量的片上测试结构，用于纳米技术中最小尺寸器件的随机变异表征。

0.13μm CMOS, 误差5%–10%

片上测试随机变异数字测量纳米技术CMOS

▸采用数字电压测量替代传统模拟电流测量

▸片上测试结构设计

▸在存在系统变异的情况下仍能准确预测随机变异

Abstract

This paper presents an on-chip characterization method for random variation in minimum sized devices in nanometer technologies, using a sense ampliﬁer-based test circuit. Instead of analog current measurements required in conventional techniques, the presented circuit operates using digital voltage measurements. Simulations of the test structure using predictive 70 nm and hardware based 0.13 m CMOS technologies show good accuracy (error 5%–10%) in the prediction of random variation even in the