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Millimeter-Wave Integrated Circuits in 65-nm CMOS
65纳米CMOS工艺下毫米波集成电路的设计与测量
40GHz放大器增益14.3dB, 60GHz放大器噪声系数5.6dB, 混频器转换损耗12.5dB
毫米波CMOS集成电路放大器混频器
▸40GHz放大器实现14.3dB增益
▸60GHz放大器噪声系数5.6dB
▸平衡电阻混频器转换损耗12.5dB
Abstract
We present the design and measurement results of
millimeter-wave integrated circuits implemented in 65-nm base-
line CMOS. Both active and passive test structures were measured.
In addition, we present the design of an on-chip spiral balun and
the transition from CPW to the balun and report transistor noise
parameter measurement results at V-band. Finally, the design and
measurement results of two amplifiers and a balanced resistive
mixer are presented. The 40-GHz amplifier exhibits 14.3 dB of
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