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An Ultra-Wideband 7-Bit 5-Gsps ADC Implemented in Submicron InP HBT Technology Beckie Chan
采用InP HBT技术实现的7位5Gsps超宽带ADC，具有高采样率和宽带宽性能。
7位分辨率，5 Gsps采样率，6 ENoB，8.4 W功耗
超宽带ADCInP HBT技术高采样率高频性能折叠插值
▸采用InP HBT技术实现超宽带ADC
▸集成前端主从采样保持和流水线级采样保持
▸在7.5 GHz高频输入下保持高有效位数
Abstract
An ultra-wideband 7-bit 5-Gsps analog-to-digital converter (ADC), fabricated in a 4-level interconnect, 0.8 m Indium-Phosphide (InP) heterojunction bipolar transistor (HBT) technology, is presented. This monolithic folding/interpolating ADC includes a front-end master–slave sample and hold and a pipeline stage sample and hold. The chip achieves 6 effective number of bits (ENoB) Nyquist performance at a sample rate of 5 Gsps, while dissipating 8.4 W. Furthermore, an ENoB performance of greater than 5.7 is maintained at analog input frequencies up to 7.5 GHz. This effective resolution–bandwidth product performance is significantly higher than any other previ- ously reported monolithic ADC with sample rate 3 Gsps.