← 返回 JSSC 论文列表JSSC 2008第10期Data Converters0.8μm InP HBT
An Ultra-Wideband 7-Bit 5-Gsps ADC Implemented in Submicron InP HBT Technology B
采用InP HBT技术实现的7位5Gsps超宽带ADC，具有高采样率和宽带宽性能。
7位分辨率，5 Gsps采样率，6 ENoB，8.4 W功耗
超宽带ADCInP HBT技术高采样率高频性能折叠插值
▸采用InP HBT技术实现超宽带ADC
▸集成前端主从采样保持和流水线级采样保持
▸在7.5 GHz高频输入下保持高有效位数
Abstract
An ultra-wideband 7-bit 5-Gsps analog-to-digital
converter (ADC), fabricated in a 4-level interconnect, 0.8
m
Indium-Phosphide (InP) heterojunction bipolar transistor (HBT)
technology, is presented. This monolithic folding/interpolating
ADC includes a front-end master–slave sample and hold and
a pipeline stage sample and hold. The chip achieves 6 effective
number of bits (ENoB) Nyquist performance at a sample rate
of 5 Gsps, while dissipating 8.4 W. Furthermore, an ENoB
performance of greater t