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JSSC 2008第10期RF & Wireless130 nm SiGe HBT

Single-Chip W-band SiGe HBT Transceivers and Receivers for Doppler Radar and Mil

首款采用SiGe HBT技术的77-85 GHz单芯片直接转换收发器,用于多普勒雷达和毫米波成像。
40 dB转换增益,77-85 GHz带宽,3.85 dB噪声系数,35 dBm饱和输出功率
SiGe HBT毫米波成像多普勒雷达收发器噪声系数
首款单芯片直接转换77-85 GHz收发器
86-96 GHz接收器设计
系统级布局和集成技术
Abstract
Member , IEEE, Pascal Chevalier , Member , IEEE, Bernard Sautreuil, and Sorin P. V oinigescu, Senior Member , IEEE Abstract—This paper presents the first single-chip direct-con- version 77–85 GHz transceiver fabricated in SiGe HBT technology, intended for Doppler radar and millimeter-wave imaging, partic- ularly within the automotive radar band of 77–81 GHz. A 1.3 mm 0.9 mm 86–96 GHz receiver is also presented. The transceiver, fabricated in a 130 nm SiGe HBT technology with /77/65/88of 230/300