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Low-Area Active-Feedback Low-Noise Amplifier Design in Scaled Digital CMOS Jonath
本文探讨了在数字CMOS中设计低面积主动反馈低噪声放大器（LNA）的方法，以满足多标准无线电的需求。
未明确提及
低噪声放大器数字CMOS主动反馈多标准无线电低面积设计
▸创新点1：低面积设计 - 通过优化电路布局和采用数字CMOS工艺，显著减少LNA的芯片面积，使其面积接近bondpad大小，降低了制造成本。
▸创新点2：主动反馈技术 - 引入主动反馈机制，提升LNA的增益和噪声性能，同时保持宽频带和窄频带应用的灵活性。
▸创新点3：多频带实现 - 设计支持多频带操作的LNA，能够适应多标准无线电的需求，提高了设备的兼容性和应用范围。
▸创新点4：CMOS下缩放技术应用 - 利用CMOS下缩放技术，进一步提升LNA的射频性能，使其在低成本数字CMOS工艺下仍能达到竞争性的RF性能。
Abstract
The emerging concept of multistandard radios calls
for low-noise amplifier (LNA) solutions able to comply with their
needs. Meanwhile, the increasing cost of scaled CMOS pushes
towards low-area solutions in standard, digital CMOS. Feedback
LNAs are able to meet both demands. This paper is devoted to
the design of low-area active-feedback LNAs. We discuss the
design of wideband, narrowband and multiband implementations.
We demonstrate that competitive RF performance is achievable
thanks to CMOS do