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Techniques to Extend Canary-Based Standby 866868 Scaling for SRAMs to 45 nm and
通过canary细胞反馈机制实现SRAM待机功耗的动态优化
45nm CMOS, 待机功耗优化, DRV跟踪
SRAM待机功耗canary细胞PVT变化亚阈值电压
▸采用canary细胞反馈机制跟踪PVT变化
▸提出亚阈值电压下控制逻辑的电路设计
▸建立新的分析模型以优化canary细胞在变异环境下的性能
Abstract
scaling is an efficient technique to reduce
SRAM leakage power during standby mode. The data retention
voltage (DRV) defines the minimum
that can be applied to
an SRAM cell without losing data. The conventional worst-case
guard-banding approach selects a fixed standby supply voltage
at design time to accommodate the variability of DRV , which
sacrifices potential power savings for non-worst-case scenarios.
We have proposed a canary-based feedback to achieve aggressive
power savings by tracking PVT v