← 返回 JSSC 论文列表
📄 下载 JSSC 原文 PDF
JSSC 2008第12期RF & Wireless90nmVCOLNA

A Compact Wideband Front-End Using a Single-Inductor Dual-Band VCO in 90 nm Digi

本文介绍了一种在90纳米数字CMOS工艺中实现的紧凑型宽带前端设计,采用无电感LNA和单电感双频VCO。
噪声系数2.7 dB,相位噪声122 dBc/Hz(3.9 GHz)和128 dBc/Hz(10 GHz),功耗小于60 mW(1.2 V电源)
CMOS双频低噪声放大器压控振荡器宽带
采用无电感LNA设计
单电感双频VCO(3.5 GHz和10 GHz)
宽频带前端设计(高达6 GHz)
Abstract
ndrea Bevilacqua , Member , IEEE, Stephane Bronckers, Student Member , IEEE, Morin Dehan , Member , IEEE, Maarten Kuijk , Member , IEEE, Piet Wambacq, Member , IEEE, and Jan Craninckx , Senior Member , IEEE Abstract—As CMOS scales down and grows more expensive, area-aware RF front-end design becomes appropriate. A wide- band front-end is presented that uses an inductorless LNA and downconversion section up to 6 GHz. Frequency synthesis is re- alized using a single-inductor dual-band 3.5 and 10 G