← 返回 JSSC 论文列表JSSC 2008第12期RF & Wireless65nm
A T-Coil-Enhanced 85 Gbs High-Swing SST Transmitter in 65 nm Bulk CMOS With 60 1
65纳米CMOS工艺中实现的高摆幅SST发射机，采用T-Coil增强，支持85 Gbps数据传输。
65nm CMOS, 1.5V, 8.5 Gb/s
SST发射机T-CoilCMOS高速数据传输阻抗调适
▸T-Coil增强设计：采用40μm×40μm的T-coil结构实现高达10GHz的16dB回波损耗优化，通过集成在输出端的高频补偿技术显著提升信号完整性（系统级创新）
▸5-bit 2-tap FIR滤波器：独立于阻抗调谐的自适应均衡技术，通过5位精度控制实现预加重和去加重功能，支持8.5Gb/s下1.0V以上的眼图高度（电路级创新）
▸独立阻抗调适机制：通过分离FIR滤波器与阻抗匹配网络的调控路径，实现终端阻抗（60Ω）与信号均衡的独立优化，降低系统交互影响（方法创新）
▸高摆幅SST架构：结合1.0V薄氧化物预驱动级和1.5V厚氧化物输出级，22路并行结构在96mW功耗下实现85Gb/s传输，支持多电平终止电压（电路拓扑创新）
Abstract
rcel Kossel, Member , IEEE, Christian Menolfi , Member , IEEE, Jonas Weiss , Member , IEEE, Peter Buchmann,
George von Bueren , Member , IEEE, Lucio Rodoni , Member , IEEE, Thomas Morf , Member , IEEE,
Thomas Toifl, Member , IEEE, and Martin Schmatz , Member , IEEE
Abstract—A source-series-terminated (SST) transmitter in a 65
nm bulk CMOS technology is presented. The circuit exhibits an
eye height greater than 1.0 V for data rates of up to 8.5 Gb/s. A
thin-oxide pre-driver stage running at 1.0 V d