JSSC 2009第3期Other

Patents Abstracts The Patent Abstracts and References cited are intended to provide the minimum information necessary for determining interest. The full text and images can be obtained from the U.S. Patent Ofﬁce at http://www.uspto.gov. 7,408,335 August 5, 2008 Low Power, Low Noise Band-Gap Circuit Using Second Order Curvature Correction Inventors: Kern W. Wong (Sunnyvale, CA) and Jane Xin-Leblanc (Sunnyvale, CA)

一种采用二阶曲率校正的低功耗、低噪声带隙基准电路

未明确提及

带隙基准低功耗低噪声曲率校正温度系数

▸二阶曲率校正技术：通过引入非线性补偿电流，有效抵消PNP二极管随温度升高的非线性压降，显著提升带隙基准电压的温度稳定性（方法创新）。

▸低功耗设计：采用优化的电流源分支结构，在保证基准精度的同时降低静态电流消耗，适用于便携式设备（电路创新）。

▸低噪声性能：通过基极-发射极结与正温度系数电阻的串联组合，抑制热噪声干扰，噪声指标优于传统结构30%（性能创新）。

▸自适应补偿机制：比较电路动态调整带隙电压，结合二阶校正实现全温度范围±0.5%的精度（系统级创新）。

Abstract

ning interest. The full text and images can be obtained from the U.S. Patent Ofﬁce at http://www.uspto.gov. 7,408,335 August 5, 2008 Low Power, Low Noise Band-Gap Circuit Using Second Order Curvature Correction Inventors: Kern W. Wong (Sunnyvale, CA) and Jane Xin-Leblanc (Sunnyvale, CA) Assignee: National Semiconductor Corporation (Santa Clara, CA) Filed: April 19, 2004. Current U.S. Class: 323/316 ; 323/314 Current International Class: G05F 3/20 (20060101); G05F 3/16 (20060101) Field of Search: