← 返回 JSSC 论文列表JSSC 2009第5期RF & Wireless0.18μm SiGe HBT
A Fully Integrated 2 2 Power Amplifier for Dual Band MIMO 802.11n WLAN Application Using SiGe HBT Technology
开发了一种用于双频MIMO 802.11n WLAN系统的全集成2×2功率放大器。
17 dBm线性功率输出（28 dB EVM），18 dBm输出（14%效率，5 GHz），19%效率（2.4 GHz，25 dB EVM）
功率放大器双频MIMO802.11n WLANSiGe HBTThrough-Wafer-Via
▸采用0.18μm SiGe HBT工艺
▸开发并应用了特殊的Through-Wafer-Via工艺
▸实现了高集成度和高性能的双频PA
Abstract
A fully monolithic 2 2(2 5 GHz-band, 2 2.4 GHz-band) power amplifier (PA) implemented in a 0.18 m Silicon Germanium (SiGe) HBT process has been developed for a dual band MIMO 802.11n WLAN system. In order to achieve the re- quired performance for the 5 GHz band while maintaining a high level of integration, different approaches have been investigated. A special Through-Wafer-Via (TWV) process on Si wafer was developed and utilized for this 2 2 PA. From fabricated 2 2 chip measurement results, both 5 GHz-band and 2.4 GHz-band PAs show above 17 dBm linear power output for 28 dB EVM and more than 18 dBm with 14% efficiency for 5 GHz-band and 19% efficiency for 2.4 GHz-band at 25 dB EVM linear output. This fully integrated PA has a total die area of 1.36 mm 3.68 mm and is packaged in a custom designed QFN4 63 2 pin package.