← 返回 JSSC 论文列表JSSC 2009第5期RF & Wireless0.18μm SiGe HBT
A Fully Integrated 2 2 Power Amplifier for Dual Band MIMO 80211n WLAN Application
开发了一种用于双频MIMO 802.11n WLAN系统的全集成2×2功率放大器。
17 dBm线性功率输出（28 dB EVM），18 dBm输出（14%效率，5 GHz），19%效率（2.4 GHz，25 dB EVM）
功率放大器双频MIMO802.11n WLANSiGe HBTThrough-Wafer-Via
▸采用0.18μm SiGe HBT工艺
▸开发并应用了特殊的Through-Wafer-Via工艺
▸实现了高集成度和高性能的双频PA
Abstract
A fully monolithic 2
2(2
5 GHz-band, 2
2.4
GHz-band) power amplifier (PA) implemented in a 0.18
m Silicon
Germanium (SiGe) HBT process has been developed for a dual
band MIMO 802.11n WLAN system. In order to achieve the re-
quired performance for the 5 GHz band while maintaining a high
level of integration, different approaches have been investigated.
A special Through-Wafer-Via (TWV) process on Si wafer was
developed and utilized for this 2
2 PA. From fabricated 2
2
chip measurement results