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JSSC 2009第5期Other0.6μm CMOS

A Sub-0.2 /61hr Bias Drift Micromechanical Silicon Gyroscope With Automatic CMOS Mode-Matching

提出一种利用MEMS陀螺仪高机械品质因数(Q)的系统架构和CMOS实现,通过残余正交误差实现模式匹配和带宽控制。
偏置漂移0.16°/hr,最大Q值36,000,带宽1-10 Hz可调,最大比例因子88 mV·s,功耗6 mW
MEMS陀螺仪模式匹配残余正交误差CMOS IC带宽控制
创新点1:利用残余正交误差实现完美模式匹配(方法创新)。通过分析并利用通常被忽视的残余正交误差,实现了驱动模式和感应模式的频率完美匹配(0 Hz间隔),显著提高了传感器的灵敏度和精度,最大Q值达到36,000。
创新点2:电子控制传感器带宽(电路创新)。通过电子方式调节机械频率,实现了传感器带宽在1至10 Hz范围内的灵活可调,适应不同应用场景的需求,同时保持低噪声性能。
创新点3:微系统可重构性(系统创新)。传感器可在传统低通模式(更大带宽)和匹配模式(低噪声)之间切换,提供了更高的系统灵活性和适应性,满足多样化的性能需求。
创新点4:高精度偏置漂移控制(性能创新)。通过优化的CMOS IC和控制算法,实现了0.16°/hr的超低偏置漂移,显著提升了陀螺仪的长期稳定性和可靠性。
Abstract
This paper describes a system architecture and CMOS implementation that leverages the inherently high me- chanical quality factor (Q) of a MEMS gyroscope to improve performance. The proposed time domain scheme utilizes the often-ignored residual quadrature error in a gyroscope to achieve, and maintain, perfect mode-matching (i.e., 0 Hz split between the high-Q drive and sense mode frequencies), as well as electronically control the sensor bandwidth. A CMOS IC and control algorithm have been interfaced with a 60 m thick silicon mode-matched tuning fork gyroscope /40/77/50/123/84/70/71/41to implement an angular rate sensing microsystem with a bias drift of 0.16 hr. The proposed technique allows microsystem reconfigurability—the sensor can be operated in a conventional low-pass mode for larger band- width, or in matched mode for low-noise. The maximum achieved sensor Q is 36,000 and the bandwidth of the microsensor can be varied between 1 to 10 Hz by electronic control of the mechanical frequencies. The maximum scale factor of the gyroscope is 88 mV s. The 3 V IC is fabricated in a standard 0.6 m CMOS process and consumes 6 mW of power with a die area of 2.25 mm/50.