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JSSC 2009第7期RF & Wireless65nm

A Low-V oltage Mobility-Based Frequency Reference for Crystal-Less ULP Radios Fa

设计了一种基于MOS晶体管电子迁移率的100kHz频率参考电路,适用于无线传感器网络。
65nm CMOS, 1.2V, 34μA, 100kHz
频率参考低功耗无线传感器网络CMOS电子迁移率
基于电子迁移率的频率参考设计
无需外部组件的低电压低功耗电路
适用于无线传感器网络的晶体振荡器替代方案
Abstract
, IEEE, Kofi A. A. Makinwa , Senior Member , IEEE, Salvatore Drago, Domine M. W . Leenaerts , Fellow, IEEE, and Bram Nauta , Fellow, IEEE Abstract—The design of a 100 kHz frequency reference based on the electron mobility in a MOS transistor is presented. The proposed low-voltage low-power circuit requires no off-chip components, making it suitable for application in wireless sensor networks (WSN). After a single-point calibration, the spread of its output frequency is less than 1.1% (3 ) over th