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JSSC 2009第7期Other

Noise Reduction in CMOS Circuits Through Switched Gate and Forward Substrate Bia

通过开关门和正向衬底偏置降低CMOS电路噪声的新方法
14 GHz pMOS VCO, 近载波相位噪声显著降低
噪声降低CMOS电路开关门偏置正向衬底偏置VCO
利用开关门偏置条件显著降低MOSFET低频噪声
正向衬底偏置在开关门条件下对噪声降低效果更显著
提出仅在晶体管关闭状态时应用正向衬底偏置的方案
Abstract
Nicola Zanolla, Peter Baumgartner , Member , IEEE, and Claudio Fiegna, Member , IEEE Abstract—A new concept of noise reduction in CMOS circuits is presented taking advantage of a strong reduction of MOSFET low-frequency noise occurring under switched gate bias conditions and forward substrate bias. The effect of forward substrate bias on noise reduction is significantly larger in switched compared to con- stant gate bias conditions. Experimental results reveal that forward substrate bias is most