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A Highly Integrated 18 GHz Frequency Synthesizer Based on a MEMS Resonator Frede
基于MEMS谐振器的高集成度18 GHz频率合成器设计
1.7–2.0 GHz, 6.25 mm², 2 V驱动电压
频率合成器MEMS谐振器硅碳化物静电调谐跨阻放大器
▸创新点1：使用MEMS谐振器作为参考源，替代传统晶体振荡器，显著减小系统尺寸（6.25 mm²）和成本，同时通过硅碳化物结构层实现更高功率处理能力和工作频率（9 MHz谐振器可调谐8.4%）。
▸创新点2：静电和热调谐能力，通过100 nm垂直 transducer gaps 实现低至2 V的静电驱动电压，结合热调谐机制扩展频率调节范围，提升系统适应性。
▸创新点3：集成高增益带宽跨阻放大器（TIA）与自动增益控制（AGC），有效抑制MEMS谐振器的非线性特性和低功率处理能力，将相位噪声优化至-122 dBc/Hz @600 kHz偏移。
▸创新点4：采用20位ΔΣ调制器的分数-N合成器架构，实现11 Hz理论输出分辨率，结合双路径环路滤波器设计，在2 V供电下达成高频率稳定性（1.8 GHz输出时相位噪声-137 dBc/Hz @3 MHz偏移）。
Abstract
a , Student Member , IEEE, Faisal Ahmad,
Paul-V ahe Cicek, Student Member , IEEE, and Mourad N. El-Gamal , Member , IEEE
Abstract—A highly integrated 1.7–2.0 GHz digitally pro-
grammable frequency synthesizer using a MEMS resonator as
its reference is presented. Due to the dimensions of the MEMS
device (e.g., 25
m by 114
m), the entire system with a total area
of 6.25 mm /50can be housed in a small standard chip package.
This considerably reduces the form factor and cost of the system,
compared