← 返回 JSSC 论文列表JSSC 2009第9期Data Converters200/250 GHz SiGe BiCMOSFlash ADC
A 20 GSs 5-Bit SiGe BiCMOS Dual-Nyquist Flash ADC With Sampling Capability up to
一款20 GS/s 5位SiGe BiCMOS双奈奎斯特闪存ADC，采样能力高达35 GS/s。
5-bit, 20 GS/s dual-Nyquist, up to 35 GS/s sampling, ENOB 5.0 (low freq), 4.0 (10 GHz)
模数转换器SiGe BiCMOS闪存ADC双奈奎斯特高速采样
▸集成异或功能的比较器降低功耗
▸双奈奎斯特操作支持高达20 GHz的采样频率
▸生成两个半速率交错输出以简化数据捕获
Abstract
e-Or Comparators
Robert A. Kertis , Member , IEEE, Jim S. Humble , Member , IEEE, Mary A. Daun-Lindberg,
Rick A. Philpott , Member , IEEE, Karl E. Fritz, Daniel J. Schwab, Jason F. Prairie, Barry K. Gilbert , Fellow, IEEE,
and Erik S. Daniel , Member , IEEE
Abstract—The design and wafer probe test results of a 5-bit SiGe
Flash ADC are presented. The integrated circuit, fabricated in a
200/250 GHz
/102/84
/70/109/97/120, SiGe BiCMOS technology, provides a 5-bit
analog to digital conversion with