← 返回 JSSC 论文列表JSSC 2009第9期RF & Wireless130nmNeural Network Accelerator
A Class-G Supply Modulator and Class-E PA in 130 nm CMOS
130 nm CMOS工艺下，Class-G电源调制器与Class-E功率放大器结合，优化非线性PA的功耗。
29.3 dBm输出功率，69% PAE，2.5% EVM，22.6%平均效率
Class-GClass-ECMOS功率放大器EER
▸创新点1：Class-G电源调制器采用并行LDO调节器架构，通过比较器和负反馈动态选择最优供电电压，显著提升功率放大器在信号包络变化时的效率（PAE达69%），属于电源管理电路创新。
▸创新点2：提出多电压域动态切换机制，根据输入信号包络实时选择不同大小的供电电压（如论文中64 QAM OFDM信号），降低PA静态功耗，属于系统级能效优化创新。
▸创新点3：结合Class-E PA的EER（包络消除与恢复）工作模式，通过Class-G调制器实现高效率（22.6%平均效率）和高线性度（EVM仅2.5%），属于混合架构创新。
▸创新点4：在130nm CMOS工艺中实现29.3dBm输出功率，验证了Class-G调制器与开关模式PA的兼容性，为低成本集成方案提供设计参考，属于工艺适配性创新。
Abstract
A class-G supply modulator utilizes parallel low-
dropout (LDO) regulators that are controlled by comparators
and negative feedback. It optimizes the power consumption of a
nonlinear power amplifier (PA) operating with supply modulation,
such that it draws current from one of multiple appropriately
sized supply voltages as determined by the input signal envelope.
The class-G modulator is used in conjunction with a class-E PA
operating in an envelope elimination and restoration (EER) mode
to effici