← 返回 JSSC 论文列表JSSC 2009第10期Other0.2μm AlGaN/GaN-SiC HEMT
A Cool Sub-02 dB Noise Figure GaN HEMT Power Amplifier With 2-Watt Output Power K
该论文报道了一种在低温下实现超低噪声和高输出功率的GaN HEMT功率放大器。
0.2 dB NF, 2 W Psat, 35% PAE
GaN HEMT低噪声放大器功率放大器宽频带低温工作
▸实现了0.2 dB以下的噪声系数
▸在2-8 GHz宽频带内保持高性能
▸低温工作条件下仍能提供2W的输出功率
Abstract
Chen, Senior Member , IEEE, Ioulia Smorchkova,
Benjamin Heying, Wen-Ben Luo, William Sutton, Mike Wojtowicz, and Aaron Oki , Fellow, IEEE
Abstract—This paper reports on a S-, C-band low-noise power
amplifier (LNPA) which achieves a sub-0.2 dB noise figure (NF)
over a multi-octave band and a saturated output power (Psat) of
2 W at a cool temperature of
30
C. The GaN MMIC is based on a
0.2
m AlGaN/GaN-SiC HEMT technology with an
75 GHz.
At a cool temperature of
30
C and a power bias of 15 V–40