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A Wideband Power Amplifier MMIC Utilizing GaN on SiC HEMT Technology Charles Camp
基于GaN on SiC HEMT技术的宽带功率放大器MMIC设计，适用于电子战系统。
30V电源操作，1.5 GHz至17 GHz带宽，10 dB以上小信号增益，9 W至15 W饱和输出功率，20%至38%峰值功率附加效率
宽带功率放大器GaN on SiCMMIC电子战系统分布式放大器
▸采用双场板0.25μm GaN on SiC器件技术
▸集成三金属互连（3 MI）工艺
▸非均匀分布式功率放大器（NDPA）方法
Abstract
a Williams, Ming-Yih Kao , Senior Member , IEEE,
Hua-Quen Tserng, Life Fellow, IEEE, Paul Saunier , Senior Member , IEEE, and Tony Balisteri
Abstract—The design and performance of a wideband power
amplifier MMIC suitable for electronic warfare (EW) systems and
other wide bandwidth applications is presented. The amplifier
utilizes dual field plate 0.25-
m GaN on SiC device technology
integrated into the three metal interconnect (3 MI) process flow.
Experimental results for the MMIC at 30 V power supp