← 返回 JSSC 论文列表JSSC 2009第10期OtherGaAs HVHBTs, GaN on SiC HEMT, SiGe Bipolar, InP DHBTs与130 nm CMOS
OCTOBER 2009 VOLUME 44 NUMBER 10 IJSCBC ISSN 0018-9200 SPECIAL SECTION ON THE IE
该期刊聚焦于半导体集成电路技术，特别是GaAs和GaN HEMT在高效率功率放大器中的应用。
2-Watt输出功率, 亚0.2 dB噪声系数, 80 GHz中心频率, 100GHz+增益带宽
功率放大器GaN HEMTSiGe双极毫米波异质集成
▸高效率WCDMA包络跟踪基站放大器
▸宽频带功率放大器MMIC技术
▸超低噪声GaN HEMT功率放大器
▸超宽调谐范围的SiGe双极VCO
▸异质集成技术中的100GHz+增益带宽差分放大器
Abstract
ompound Semiconductor Integrated Circuit Symposium
(CSICS 2008) . . ..................................... ....................................... W . C . B . P eatman and E. S. Daniel 2627
High-Efficiency WCDMA Envelope Tracking Base-Station Amplifier Implemented With GaAs HVHBTs . . . . J. Jeong,
D. F . Kimball, M. Kwak, P . Draxler , C. Hsia, C. Steinbeiser , T. Landon, O. Krutko, L. E. Larson, and P . M. Asbeck 2629
A Wideband Power Amplifier MMIC Utilizing GaN on SiC HEMT Technology ...........