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JSSC 2009第11期Other

Accurate Array-Based Measurement for Subthreshold-Current of MOS Transistors Tak

提出一种用于精确测量MOS晶体管亚阈值电流的阵列结构,采用LCS和PES技术及MCC数据处理方法。
亚阈值泄漏电流测量精度达几皮安
亚阈值电流MOS晶体管阵列结构泄漏电流测量精度
LCS(泄漏电流切断开关)减少非目标器件的泄漏电流
PES(电位均衡供应)通过均衡源漏极电位进一步减少掩蔽电流
MCC(掩蔽电流消除)通过减去剩余掩蔽电流提高测量精度
Abstract
iaki Nakayama , Member , IEEE, and Kazuya Masu, Member , IEEE Abstract—A MOS transistor-array structure for accurate sub- threshold current characterization is presented. Two architectural improvements called LCS and PES, and measured data treatment called MCC are utilized. The LCS, leakage current cut-off switch, reduces unwanted leakage current of the non-target devices which masks the target leakage current. The PES, potential equalizing supply, further reduces the masking current by setting