Large-Scale SRAM Variability Characterization in 45 nm CMOS Zheng Guo Student Me

Abstract

Increased process variability presents a major chal- lenge for future SRAM scaling. Fast and accurate validation of SRAM read stability and writeability margins is crucial for estimating yield in large SRAM arrays. Conventional SRAM read/write metrics are characterized through test structures that are able to provide limited hardware measurement data and cannot be used to investigate cell bit fails in functional SRAM arrays. This work presents a method for large-scale characteriza- tion of read