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JSSC 2009第11期Power Management0.18μm CMOSVCO

Low Phase Noise G/109-Boosted Differential Gate-to-Source Feedback Colpitts CMOS VCO Jong-Phil Hong, Student Member , IEEE

提出一种低相位噪声的差分门极-源极反馈Colpitts CMOS振荡器,具有更低的启动电流和更好的相位噪声性能。
1.86 GHz, 105 dBc/Hz @100 kHz, 128 dBc/Hz @1 MHz, 1.8 mA @0.9V
低相位噪声Colpitts振荡器CMOS差分反馈电压控制振荡器
采用差分门极-源极反馈Colpitts结构
扩展开关晶体管的饱和模式操作范围
通过电容反馈网络降低闪烁噪声对相位噪声的影响
Abstract
This paper presents a -boosted differential gate-to- source feedback Colpitts (GS-Colpitts) CMOS voltage-controlled oscillator (VCO) that consumes a lower oscillation start-up cur- rent. The proposed architecture allows a wider range of saturation mode operation for the switching transistors, which helps suppress AM-to-FM conversion by these transistors. In addition, the phase noise contribution of the flicker noise in the switching transistor is reduced through the capacitor feedback network of the Colpitts os- cillator. As a result, the proposed topology can achieve better phase noise performance and a higher figure of merit (FOM) compared to a conventional NMOS-only cross-coupled VCO. The proposed VCO is implemented in a 0.18- m CMOS for 1.78 to 1.93 GHz op- eration. At 1.86 GHz, the measurements show phase noise of 105 and 128 dBc/Hz (corresponding to /70/79/77 /61 /49/57/49 /50) at offsets of 100 kHz and 1 MHz, respectively, while dissipating 1.8 mA from a 0.9-V supply.