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A 150 GHz Amplifier With 8 dB Gain and 436 dBm 8011597116in Digital 65 nm CMOS Us
65nm CMOS工艺下实现的150 GHz放大器，增益8.2 dB，带宽27 GHz。
150 GHz, 8.2 dB增益, 27 GHz带宽, 25.5 mW功耗, 1.1V供电
150 GHz放大器65nm CMOS毫米波集成电路虚拟建模微带线
▸简化拓扑结构减少匹配损耗并扩展带宽
▸采用虚拟填充微带线作为紧凑且符合密度规则的匹配元件
▸并行栅极馈电的晶体管布局提供5.7 dB的MSG
Abstract
yo Seo, Member , IEEE, Basanth Jagannathan, John Pekarik , Member , IEEE, and
Mark J. W . Rodwell, Fellow, IEEE
Abstract—A 150 GHz amplifier in digital 65 nm CMOS process
is presented. Matching loss is reduced and bandwidth extended
by simplistic topology: no dc-block capacitor, shunt-only tuning
and radial stubs for ac ground. Dummy-prefilled microstrip lines,
with explicit yet efficient dummy modeling, are used as a com-
pact, density-rule compliant matching element. Transistor layout
with parall