JSSC 2009第12期RF & Wireless90nmPower Amplifier

A Fully Integrated Dual-Mode Highly Linear 24 GHz CMOS Power Ampliﬁer for 4G WiM

一款用于4G WiMAX的全集成双模高线性24 GHz CMOS功率放大器

90 nm CMOS, 2.4 GHz, 30.1 dBm饱和输出功率, 33% PAE, 28 dB小信号增益

CMOS功率放大器线性度4G WiMAXOFDM功率合成器

▸采用两级变压器功率合成器

▸引入新颖的旁路网络确保稳定性

▸优化的偏置和电容补偿实现平坦的AM-AM和AM-PM响应

Abstract

In recent years, there has been tremendous interest in trying to implement the power ampliﬁer in CMOS, due to its cost and integration beneﬁts. Most of the high power (watt-level) CMOS PAs reported to date have not exhibited sufﬁcient linearity required for next generation wireless standards. In this paper, we report a single-chip linear CMOS PA with sufﬁcient power and linearity for emerging OFDM-based 4G WiMAX applica- tions. This 90 nm 2.4 GHz CMOS linear power ampliﬁer uses a two-stage trans