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Pseudo-Continuous-Time Readout Circuit for a 300 s Capacitive 2-Axis Micro-Gyros
采用伪连续时间读出技术的2轴微陀螺接口电路,减小芯片面积并降低噪声。
0.35μm HVCMOS, 2.5mm², 1.8mA@2.5-3.6V, 噪声0.015°/s/√Hz(x轴)/0.041°/s/√Hz(y轴)
角速度电容式陀螺仪接口电路MEMS
▸创新点1:伪连续时间读出技术(Pseudo-Continuous-Time Readout Technique)通过创新的信号处理方式,在不需要传统大RC时间常数的条件下实现了高精度电容检测,将芯片面积缩减至2.5 mm²,同时保持x轴和y轴噪声低至0.015°/√Hz和0.041°/√Hz。
▸创新点2:直流偏置电压检测方法(DC Biasing Voltage Detection)摒弃了传统交流激励方式,直接利用直流偏置电压进行电容检测,简化了电路结构并降低了功耗(单通道仅0.4 mA),同时避免了复杂交流调制解调电路带来的噪声问题。
▸创新点3:微型化系统集成方案在0.35μm HVCMOS工艺中实现了驱动接口与检测接口的全集成,工作电压范围2.5-3.6V,总电流1.8mA,相比分立式解决方案显著降低了体积和功耗,为MEMS陀螺仪提供了完整的片上系统解决方案。
▸创新点4:双轴同步检测架构通过优化的时序控制电路,实现了x轴和y轴电容信号的并行处理,在单芯片上完成双轴角速度测量,避免了传统分时复用技术带来的带宽限制和交叉干扰问题。
Abstract
and Kari A. I. Halonen , Member , IEEE
Abstract—The interface for a capacitive 2-axis micro-gyroscope
is implemented in a 0.35-
m HVCMOS technology with an active
area of 2.5 mm/50. Compared to a regular continuous-time interface
with large on-chip RC time constants, the reduction of the chip area
is made possible by the pseudo-continuous-time readout technique,
of which a detailed analysis is presented in this paper. The tech-
nique allows a dc biasing voltage to be used for the detection and