← 返回 JSSC 论文列表JSSC 2010第2期RF & Wireless0.18μmLNANeural Network Accelerator
A Millimeter-Wave (23–32 GHz) Wideband BiCMOS Low-Noise Amplifier
一款采用BiCMOS技术的23-32 GHz宽带低噪声放大器，具有低功耗和宽带宽特性。
0.18μm BiCMOS, 1.5V, 13mW, 12dB增益, 9GHz带宽, 4.5–6.3dB噪声系数
毫米波宽带放大器低噪声放大器BiCMOSK-band
▸采用耦合谐振器实现宽带负载
▸在K-band实现最宽带宽与最低功耗
▸提供宽带输入匹配、增益、噪声系数和线性度的解析表达式
Abstract
This paper presents a 23–32 GHz wideband BiCMOS low-noise amplifier (LNA). The LNA utilizes coupled-resonators to provide a wideband load. To our knowledge, the proposed LNA achieves the widest bandwidth with minimum power consumption using 0.18 m BiCMOS technology in K-band. Analytical ex- pressions for the wideband input matching, gain, noise figure and linearity are presented. The LNA is implemented using 0.18 m BiCMOS technology and occupies an area of 0.25 mm/50. It achieves a voltage gain of 12 dB, 3-dB bandwidth of 9 GHz, noise figure between 4.5–6.3 dB, linearity higher than 6.4 dBm with a power consumption of 13 mW from a 1.5 V supply.