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JSSC 2010第3期Data Converters90nm

A 002-mm509-Bit 50-MSs Cyclic ADC in 90-nm Digital CMOS Technology Y en-Chuan Hu

采用部分正反馈拓扑的循环ADC,在90nm CMOS工艺下实现50MS/s和50.5dB SNDR。
90nm CMOS, 1.0V, 50MS/s, 50.5dB SNDR, 6.9mW
循环ADC部分正反馈数字CMOS工艺高速转换低功耗
采用跟踪与评估技术提升残差评估速度
部分正反馈拓扑缩短乘法电路评估时间
合并残差评估与采样阶段以减少转换延迟
Abstract
DC employs a track-and-evaluation technique for enhancing the speed of residue evaluation. The pro- posed multiply-by-two circuit has a shorter evaluation time than the conventional design due to the application of a partial positive feedback topology. The residue evaluation and sampling phases are merged to reduce the conversion latency. Hence, only four clock cycles are required to perform the 9-bit conversion. The proposed 0.02-mm /50ADC has been fabricated in 90-nm digital CMOS tech- nology.