← 返回 JSSC 论文列表JSSC 2010第3期RF & Wireless0.18微米LNA
A Compact Wideband CMOS Low Noise Amplifier With Gain Flatness Enhancement Y ueh-
本文提出了一种紧凑型0.18微米CMOS宽带增益平坦低噪声放大器。
16.4 dB增益, 2.1 dB噪声系数, 50-900 MHz带宽, 1.8 V电压, 14.4 mW功耗
CMOS低噪声放大器宽带增益平坦噪声消除
▸噪声消除技术：采用创新的噪声抵消方法，通过电路设计有效降低噪声系数至2.1 dB，显著提升信噪比（方法创新）
▸栅极电感增益峰值技术：通过独特的栅极电感设计增强增益平坦度，实现50-900 MHz频段内仅0.4 dB的增益波动（电路创新）
▸无源电感设计：完全摒弃传统被动电感，实现芯片核心面积仅145μm×247μm的紧凑型设计（系统创新）
▸宽带性能优化：结合上述技术，在14.4 mW低功耗下同时达成16.4 dB增益与宽频带特性（性能创新）
Abstract
This paper presents a compact 0.18-
m CMOS
wideband gain-flattened low noise amplifier (LNA). The low
noise characteristic of the LNA is achieved by the noise canceling
technique and the gain flatness is enhanced by the gate-induc-
tive gain-peaking technique. In addition to extending flat-gain
bandwidth, the proposed gain-peaking technique results in better
wideband noise canceling and quick gain roll-off outside the de-
sired signal band to reject interference. Without using any passive
inductor,