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JSSC 2010第4期MemorySRAM

3-D System Integration of Processor and Multi-Stacked SRAMs Using Inductive-Coup

采用电感耦合技术实现处理器与多层SRAM的三维系统集成。
1 pJ/b, 0.15 mm²/50 Gbps
电感耦合三维系统集成处理器SRAM信号衰减抑制
新型3D集成线穿透多层结构缩短链路距离
开放跳越电感方案抑制信号衰减
精准数据捕获方案避免未定义值传播
Abstract
EE, Y asuyuki Okuma, Kiichi Niitsu , Member , IEEE, Y asuhisa Shimazaki, Member , IEEE, Y asufumi Sugimori, Y oshinori Kohama, Kazutaka Kasuga, Itaru Nonomura, Naohiko Irie, Toshihiro Hattori , Member , IEEE, Atsushi Hasegawa, and Tadahiro Kuroda , Fellow, IEEE Abstract—This paper describes a three-dimensional (3-D) system integration of a full-fledged processor chip and two memory chips using inductive coupling. To attain a 3-D commu- nication link with a smaller area and lower power-consumption