← 返回 JSSC 论文列表JSSC 2010第4期Clocking & PLLs65nmVCO
An All-In-One Silicon Odometer for Separately Monitoring HCI, BTI, and TDDB John Keane, Student Member , IEEE, Xiaofei Wang , Student Member , IEEE
提出一种全集成硅里程计，用于高频率分辨率下分别监测HCI、BTI和TDDB老化效应。
65nm CMOS, 亚皮秒级频率分辨率
热载流子注入偏置温度不稳定性时间依赖性介质击穿环形振荡器可靠性监测
▸采用改进的环形振荡器对分离HCI和BTI老化效应
▸利用“反向驱动”概念实现双结构电压转换
▸通过拍频检测系统实现亚皮秒级频率分辨率
Abstract
ent Member , IEEE, Devin Persaud , Member , IEEE, and
Chris H. Kim , Member , IEEE
Abstract—We present an on-chip reliability monitor capable
of separating the aging effects of hot carrier injection (HCI),
bias temperature instability (BTI), and time-dependent dielectric
breakdown (TDDB) with high frequency resolution. This task is
accomplished with a pair of modified ring oscillators (ROSCs)
which are representative of standard CMOS circuits. We use
a “backdrive” concept, in which one ROSC drive