Abstract
ent Member , IEEE, Devin Persaud , Member , IEEE, and
Chris H. Kim , Member , IEEE
Abstract—We present an on-chip reliability monitor capable
of separating the aging effects of hot carrier injection (HCI),
bias temperature instability (BTI), and time-dependent dielectric
breakdown (TDDB) with high frequency resolution. This task is
accomplished with a pair of modified ring oscillators (ROSCs)
which are representative of standard CMOS circuits. We use
a “backdrive” concept, in which one ROSC drive