Abstract
sus A. del Alamo , Fellow, IEEE, Susan L. Sweeney, Jing Wang, and
Basanth Jagannathan
Abstract—The substrate resistance of 45 nm CMOS devices
shows a strong dependence on the distance between the device
edge and the substrate contact ring, as well as on the number of
sides that the surrounding ring contacts the substrate. We find
that the unilateral gain is impacted by the substrate resistance
/40/82/115/120/41through the gate-body capacitance feedback path at low
to medium frequencies (
20 GHz)