← 返回 JSSC 论文列表JSSC 2010第5期RF & Wireless65nm
Linearized Dual-Band Power Amplifiers With Integrated Baluns in 65 nm CMOS for a
65nm CMOS工艺集成巴伦的双频段线性化功率放大器，适用于802.11n MIMO WLAN应用。
28.3 dBm (2.4 GHz), 26.7 dBm (5 GHz), 35.3% (2.4 GHz), 25.3% (5 GHz) 效率
功率放大器双频段CMOS线性化巴伦
▸集成双频段巴伦设计：采用创新的片上巴伦结构，实现了2.4 GHz和5 GHz双频段信号的高效转换与匹配，显著减小了芯片面积（0.31 mm²和0.27 mm²），同时支持802.11n MIMO应用。
▸多自包含线性化算法：通过集成多种线性化算法，有效提升了功率放大器的线性度，在54 Mbps OFDM传输下实现了25 dB的EVM（误差向量幅度），适用于高数据速率WLAN通信。
▸高可靠性加速老化测试：对数百个样品进行了加速老化测试，验证了功率放大器在长期工作条件下的可靠性，未出现任何故障，为工业应用提供了可靠性保障。
▸双频段高效率性能：在3.3 V电源电压下，2.4 GHz和5 GHz频段分别实现了28.3 dBm和26.7 dBm的饱和输出功率，峰值效率达到35.3%和25.3%，展现了优异的能效比。
Abstract
Fully integrated dual-band power amplifiers with
on-chip baluns for 802.11n MIMO WLAN applications are pre-
sented. With a 3.3 V supply, the PAs produce a saturated output
power of 28.3 dBm and 26.7 dBm with peak drain efficiency of
35.3% and 25.3% for the 2.4 GHz and 5 GHz bands, respectively.
By utilizing multiple fully self-contained linearization algorithms,
an EVM of
25 dB is achieved at 22.4 dBm for the 2.4 GHz band
and 20.5 dBm for the 5 GHz band while transmitting 54 Mbs
OFDM. The chip is