← 返回 JSSC 论文列表JSSC 2010第5期Other0.13μm SiGe BiCMOS/65nm CMOS
MA Y 2010 VOLUME 45 NUMBER 5 IJSCBC ISSN 0018-9200 SPECIAL SECTION ON THE 2009 I
该论文集合涵盖了多种射频集成电路设计，包括直接数字合成器、线性化功率放大器和低噪声接收器等。
24位分辨率, 5.0 GHz频率, 0.13μm SiGe BiCMOS工艺, 65 nm CMOS工艺
射频集成电路直接数字合成器功率放大器低噪声放大器软件无线电
▸24位5.0 GHz直接数字合成器
▸线性化双频功率放大器
▸300–800 MHz可调滤波器与线性化低噪声放大器
▸基于SASP的全软件无线电接收机
▸射频接收器前端的有源反馈干扰消除技术
Abstract
quency Integrated Circuits (RFIC) Symposium . ...........
............................................................................................................................ A . W ang 942
24-bit 5.0 GHz Direct Digital Synthesizer RFIC With Direct Digital Modulations in 0.13
m SiGe BiCMOS
Technology ................................. ................................. X . Geng, F . F . Dai, J. D. Irwin, and R. C. Jaeger 944
Linearized Dual-Band Power Amplifiers With Integrated Baluns in 65