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JSSC 2010第6期Memory45nm/40nmSRAM

A Differential Data-Aware Power-Supplied D50AP 8T SRAM Cell With Expanded WriteR

提出一种差分数据感知供电的D50AP 8T SRAM单元,解决传统8T和6T单元在写入和半选访问中的稳定性问题。
VDDmin比传统8T宏低240mV–200mV
SRAM8T单元差分数据感知低电压稳定性
差分数据感知供电技术提升写入和半选访问的稳定性
采用升压位线方案提高读取电流
在45nm和40nm工艺下实现更低的VDDmin
Abstract
Due to global and local process variations, on-chip SRAM suffers failures at a low supply voltage (VDD). This study proposes a differential data-aware power-supplied D /50AP 8T SRAM cell to address the stability and trade-off-issues between write and half-select accesses that still remain in the conventional 8T and 6T cells. Powered by its bitline pair, the proposed 8T cell applies differential data-aware-supplied voltages to its cross-cou- pled inverters to increase both stability margins for w