JSSC 2010第7期Clocking & PLLs65nmVCO

A 006 mm 5011 mW Local Oscillator for the GSM Standard in 65 nm CMOS Stefano Dal

65nm CMOS工艺下设计的GSM标准本地振荡器，面积0.06mm²，功耗11mW。

65nm CMOS, 1.2V, 9mA, 0.06mm², 相位噪声<133dBc/Hz@3MHz偏移

CMOS频率分频器GSM注入锁定压控振荡器

▸采用薄氧化层器件设计

▸13至15GHz LC VCO结合四分频注入锁定分频器

▸环形振荡器拓扑实现两倍频锁定范围

Abstract

, Member , IEEE, Marc Tiebout , Member , IEEE, Nicola Da Dalt , Member , IEEE, Andrea Gerosa , Senior Member , IEEE, and Andrea Neviani , Member , IEEE Abstract—A GSM-compliant local oscillator consuming a tiny die area of only 0.06 mm /50and drawing 9 mA from a 1.2 V supply has been designed in a 65 nm CMOS process using thin-oxide de- vices only. The system is made of a 13 to 15 GHz LC VCO fol- lowed by a divide-by-four injection-locked frequency divider. The divider employs a ring oscillator