← 返回 JSSC 论文列表JSSC 2010第9期RF & Wireless
A Subharmonic Receiver in SiGe Technology for 122 GHz Sensor Applications Klaus Schmalz, Wolfgang Winkler, Johannes Borngräber, Wojciech Debski, Bernd Heinemann, and J.
介绍了一种基于SiGe技术的122GHz亚谐波接收机设计。
SiGe:C BiCMOS, 3.3V, 139mA, 25-31dB增益, 8-11dB噪声系数
亚谐波接收机SiGe技术低噪声放大器毫米波电路压控振荡器
▸采用亚谐波混频器设计
▸集成低噪声放大器(LNA)和压控振荡器(VCO)
▸利用多相滤波器实现信号处理
Abstract
, Wojciech Debski, Bernd Heinemann, and
J. Christoph Scheytt, Member , IEEE
Abstract—The iterative design of an integrated subharmonic re-
ceiver for 120–127 GHz is presented. The receiver consists of a
single-ended low-noise amplifier (LNA), a push-push voltage-con-
trolled oscillator (VCO) with 1/32 divider, a polyphase filter, and a
subharmonic mixer. The receiver is fabricated in SiGe:C BiCMOS
technology with
/109/97/120of 255 GHz/315 GHz. In the first design
the differential down-conversion ga