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Introduction to the Special Section on the 23rd BipolarBiCMOS Circuits and Techn
本文介绍了第23届Bipolar/BiCMOS电路与技术会议的特刊，包含五篇精选论文。
255 GHz/315 GHz
Bipolar/BiCMOS模拟/RF电路工艺技术建模器件
▸122 GHz接收器设计：采用SiGe:C BiCMOS技术实现集成化亚谐波接收器，包含单端LNA、推挽式VCO（带1/32分频器）、多相滤波器和亚谐波混频器，工作频率达122 GHz，ft/fmax为255 GHz/315 GHz，突破传统毫米波接收器的频率限制（方法创新）。
▸多频段合成器：支持0.6–4.6 GHz、5–7 GHz、10–14 GHz频段的同相/正交信号生成及20–28 GHz同相信号，适用于软件定义无线电（SDR）应用，通过可重构架构实现宽频带覆盖（系统创新）。
▸8.7–13.8 GHz正交电流控制振荡器：采用无变容管设计的变压器耦合QCCO，实现45.3%调谐范围，在11 GHz输出时相位噪声达-110 dBc/Hz@10 MHz偏移，显著提升高频信号生成稳定性（电路创新）。
▸0.13μm SiGe BiCMOS工艺：针对高性能混合信号设计优化，结合SiGe HBT与CMOS器件特性，支持毫米波电路集成，为上述接收器和合成器提供关键工艺基础（技术创新）。
Abstract
the IEEE J OURNAL OF
SOLID-STATE CIRCUITS traditionally covers a selection
of papers that were presented at the Bipolar/BiCMOS Circuits
and Technology Meeting (BCTM). This Special Issue contains
extended papers from the 23rd BCTM, held October 12–14,
2009, in Capri, Italy.
The papers in this issue were selected from all papers pre-
sented at BCTM’2009, based on the feedback from about 45
members of the technical program committee and the session
chairmen, and on ratings by the conference attend