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A Highly Linear Two-Stage Amplifier Integrated Circuit Using InGaP/GaAs HBT Kyunggon Choi, Minsu Kim, Hyungchul Kim, Sungchan Jung, Jaeyong Cho, Sungchul Y oo, Y ong Hwan Kim, Hyungmo Y oo, and Y oungoo Y ang, Member , IEEE
提出一种基于InGaP/GaAs HBT技术的高线性两阶段放大器IC，采用预失真方法优化线性度。
输出1dB压缩点29.6 dBm，三阶输出截点48.7 dBm，静态电流375 mA，单偏置电源5.5 V
两阶段放大器高线性InGaP/GaAs HBT预失真三阶互调失真
▸采用预失真方法对齐两阶段放大器的非线性特性以增强线性化
▸优化有源偏置电路中的电阻以实现三阶互调分量的最佳抵消条件
▸基于InGaP/GaAs HBT技术设计并实现900 MHz频段的高线性放大器
Abstract
ung, Jaeyong Cho, Sungchul Y oo, Y ong Hwan Kim,
Hyungmo Y oo, and Y oungoo Y ang, Member , IEEE
Abstract—This paper presents a linearized two-stage amplifier
integrated circuit (IC), having an output power level of about
1 Watt, used for general purpose applications. A predistortion
method, based on alignment of the nonlinear characteristics be-
tween the first- and the second-stage amplifiers, has been proposed
and analyzed in order to enhance the linearization aspects. The
resistors in the activ