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A Passive W-Band Imaging Receiver in 65-nm Bulk CMOS Alexander Tomkins Patrice G
一篇关于65纳米CMOS工艺中实现的W波段被动成像接收器的IEEE JSSC论文。
65nm CMOS, 1.2V, 33mA, 200kV/W responsivity, 0.1pW/√Hz NEP
W波段被动成像CMOS毫米波Dicke辐射计
▸集成SPDT开关、五级望远镜级联LNA和W波段平方律检测器
▸实现了高灵敏度和低噪声等效功率(NEP)
▸首次在标准CMOS中实现此集成度的W波段被动成像接收器
Abstract
er , IEEE
Abstract—A passive imaging receiver operating in the W-band
around 90 GHz has been realized in a digital 65-nm CMOS process.
The circuit, occupying only 0.41 mm /50, integrates an SPDT switch
with 4.2 dB loss and 25 dB isolation, a five-stage telescopic cascode
LNA with 27 dB gain at 90 GHz, and a W-band square-law de-
tector, all consuming less than 33 mA from 1.2 V. A version of the
receiver without the input SPDT switch has a peak responsivity of
over 200 kV/W and a minimum NEP of le